In this paper,the ESD discharge capability of GGNMOS(gate grounded NMOS)device in the radiation-hardened 0.18μm bulk silicon CMOS process(Rad-Hard by Process:R
We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers