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采用类LLP(Lee-Low-Pines)变换和分数维变分法,在讨论有限深非对称方势阱Ga1-xAlxAs/GaAs/Ga0.7Al0.3As的分数维基础上,计算了其中激子的基态能量以及声子对其影响,随着势阱宽度增加,激子能量先减小后增大,出现一个最小值.讨论了一侧势垒高度变化对分数维、激子基态能量的影响,并发现声子作用使得激子能量明显增大.另外,非对称方势阱中的激子结合能随阱宽的减小而增大,而且随一侧势垒的增大而增大.
On the basis of discussing the fractal dimension of Ga1-xAlxAs / GaAs / Ga0.7Al0.3As finite asymmetric square well with the method of LLP (Lie-Low-Pines) transformation and fractal variation method, The energy of the ground state and the influence of the phonon on it, the energy of the exciton first decreases and then increases with the increase of the width of the potential well, resulting in a minimum value.The influence of the height of the potential barrier on the fractal energy and exciton ground state energy is discussed, And found that the phonon effect makes the exciton energy significantly increased.In addition, the exciton binding energy of the asymmetric square well increases with the decrease of the well width, and increases with the increase of the potential barrier at one side.