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用光发射谱 (OES)和喇曼散射谱 (Raman)研究了VHF PECVD制备硅薄膜的结构特性。OES测试结果表明 :随功率增加 ,对应各基团峰的强度增大 ;结合喇曼的测试结果 ,OES谱得到的结果可以用来定性地表征制备薄膜的晶化程度 ;纯化器可以降低制备薄膜中的氧含量 ,Ra man测试结果表明相应的晶化率低。
The structural characteristics of silicon films prepared by VHF PECVD were studied by optical emission spectroscopy (OES) and Raman scattering spectroscopy (Raman). OES test results show that: with the increase of power, corresponding to the peak intensity of each group increases; combined with the Raman test results, OES spectrum results can be used to qualitatively characterize the degree of crystallinity of the prepared film; purifier can reduce the preparation of the film In the oxygen content, Ra man test results show that the corresponding low crystallization rate.