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用12MeV电子束对普通高压晶闸管、快速晶闸管、双向晶闸管进行辐照，测试这几种器件的主要电学参数。实验发现12MeV电子辐照能明显改善这些电力半导体器件的电学性能。辐照后的器件经过退火处理，可以长期稳定工作。
With 12MeV electron beam on the ordinary high-voltage thyristors, fast thyristor, triac thyristor irradiation, the test of these devices the main electrical parameters. The experiment found that 12MeV electron irradiation can significantly improve the electrical performance of these power semiconductor devices. After irradiation of the device after annealing, you can work long-term stability.