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基于提升GaAs低噪声放大器(LNA)的抗静电(ESD)能力的需求,且实现器件小型化轻量化,设计了一种S波段GaAs低噪声放大器的ESD防护电路,该电路利用1/4波长线的微波特性,通过1/4波长微带线并联在GaAs芯片的输入输出端,瞬态二极管(TVS)并联在芯片的电源端,不改变器件原有封装尺寸的条件下构成保护结构。基于ESD人体模型,运用静电模拟仪器对低噪声放大器进行了模拟试验,并对其性能进行了测试。结果表明,在6.5mm×6.5mm×2.4mm的封装尺寸下,器件的抗静电能力从250V提高到了1000V,在频率为2.6~3.7GHz,带内增益大于25dB,增益平坦度小于±0.5dB,噪声系数小于1.5dB,满足高可靠领域应用的要求。
Based on the need of improving the anti-static (ESD) capability of GaAs low-noise amplifiers (LNAs) and reducing the size and weight of the devices, an ESD protection circuit for an S-band GaAs LNA is designed using a 1/4 wavelength line The microwave characteristic is connected in parallel with the input / output terminal of the GaAs chip through the 1/4 wavelength microstrip line. The transient diode (TVS) is connected in parallel with the power supply terminal of the chip, and the protection structure is formed without changing the original package size of the device. Based on the ESD human body model, the low noise amplifier was simulated by using the electrostatic simulation instrument and its performance was tested. The results show that under the package size of 6.5mm × 6.5mm × 2.4mm, the antistatic ability of the device is increased from 250V to 1000V, the gain is more than 25dB, the gain flatness is less than ± 0.5dB at the frequency of 2.6 ~ 3.7GHz, Noise figure is less than 1.5dB, to meet the requirements of high reliability applications.