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利用反应离子束溅射和后退火工艺制备一种新的相变型VO2薄膜,对该薄膜进行电学测试、XRD和光学透过率的测试。这种工艺制备出的相变型VO2薄膜相变温度更接近室温,XRD显示这种薄膜中有VO2、V2O5成分的存在。对这种薄膜的光学透过率测试表明,低温下薄膜的透过率是高温下薄膜透过率的近5倍。通过实验可以看出,氧气分压、退火温度、退火时间是影响制备新型相变型VO2薄膜的重要因素。
A new phase change VO2 thin film was prepared by reactive ion beam sputtering and post-annealing process. The films were tested by electrical test, XRD and optical transmittance. The phase transition temperature of phase change VO2 thin films prepared by this process is closer to room temperature, and XRD shows the presence of VO2 and V2O5 in this thin film. Optical transmission tests on this film showed that the film’s transmission at low temperatures is nearly five times the film’s transmission at high temperatures. It can be seen from the experiment that the partial pressure of oxygen, the annealing temperature and the annealing time are the important factors that affect the preparation of a novel VO2 thin film.