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使用射频磁控溅射,在正方形石英衬底上沉积透明导电掺Al的ZnO(AZO)和Si共掺AZO(AZO:Si)薄膜.系统研究了靶-基底距离(Dst)和Si共掺对AZO薄膜电学、光学性质的影响.电阻率、载流子浓度和迁移率都强烈地依赖于靶-基底距离,随着靶-基底距离的减少,载流子浓度和迁移率都有显著的增加,电导率也随之提高.在靶-基底距离为4.5cm处,得到最低电阻率4.94×10-4Ω·cm,此时的载流子浓度和迁移率分别是3.75×1020cm-3和33.7cm2·V-1·s-1.X射线光电子能谱(XPS)、X射线衍射(XRD)和边界散射模型被用于分析载流子浓度、迁移率和靶-基底距离的关系.透射谱显示,在可见-近红外范围内所有样品均有大于93%的平均透射率,同时随着靶基距离的减少,吸收边蓝移.AZO:Si表现出可与AZO相比拟的高电导和高透射光学特性,但在热湿环境中却有着更好的电阻稳定性,这在实际使用中很有意义.
A transparent conductive Al-doped ZnO (AZO) and a Si-doped AZO (AZO: Si) thin film were deposited on a square quartz substrate by RF magnetron sputtering.The influence of target-substrate distance (Dst) AZO thin films.Electric resistivity, carrier concentration and mobility are strongly dependent on the target-substrate distance, with the target-substrate distance decreased, the carrier concentration and mobility have increased significantly , The conductivity also increased.With the target-substrate distance of 4.5cm, the lowest resistivity was 4.94 × 10-4Ω · cm, the carrier concentration and mobility at this time were 3.75 × 1020cm-3 and 33.7cm2 X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and boundary scattering models were used to analyze the relationship between carrier concentration, mobility, and target-substrate distance. Transmission Spectrum Display , With an average transmittance greater than 93% for all samples in the visible-near-infrared range with a blue shift of the absorption edge as the distance from the target was reduced.AZO: Si exhibits high conductivity and high transmission comparable to AZO Optical properties, but in the hot and humid environment has a better resistance stability, which makes sense in actual use.