通过适当的工艺措施 ,采用Bridgman法生长了直径为 30mm的X射线及γ射线探测器级的Cd0 9Zn0 1Te晶锭 .测试结果表明 :该晶锭结晶质量良好 ,位错密度低 ,成分均匀 ,杂质含量低 ,红外透过率和电阻率都十分接近本征Cd0 9Zn0 1Te的值 .并从晶体的生长特性、缺陷和杂质的角度 ,分析了生长高性能晶体的条件 ,研究了生长Cd1-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系 The X-ray and γ-ray detector-grade Cd0 9Zn0 1Te ingot with diameter of 30mm was grown by Bridgman method through proper technological measures.The test results show that the ingot has good crystal quality, low dislocation density, uniform composition, Low content of infrared radiation and resistivity are very close to the value of intrinsic Cd0 9Zn0 1Te.The crystal growth conditions, defects and impurities from the perspective of the analysis of the growth of high-performance crystal conditions, the growth of Cd1-xZnxTe crystal The relationship between the x value and the defect and impurity concentration