PIP法制备SiC纳米线增强SiC_f/SiC复合材料及其力学性能

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利用化学气相沉积法原位生长Si C纳米线,制备出Si C纳米线增强Si Cf/Si C复合材料。研究了Si C纳米线及Si C纳米线/基体热解碳界面调控对复合材料的力学性能、裂纹扩展行为、纤维与基体之间的结合强度的作用。研究表明:Si C纳米线的引入能显著提高复合材料的致密化效果。通过调控Si C纳米线/基体的界面厚度,可显著提高复合材料的力学性能。Si C纳米线的引入提高了纤维/基体的界面结合强度,而Si C纳米线表面热解碳的引入可改善纤维/基体的界面结合强度。此外,碳化硅纳米线及其界面调控,能有效优化基体的微区力学行为及断裂模式。 Si C nanowire-reinforced Si Cf / Si C composite was prepared by in-situ growth of Si C nanowires by chemical vapor deposition. The effects of Si C nanowires and Si C nanowires / matrix pyrolytic carbon interface on the mechanical properties, crack propagation behavior and the bonding strength between the fibers and the matrix were studied. The results show that the introduction of Si C nanowires can significantly improve the densification effect of the composites. By adjusting the interface thickness of Si C nanowires / matrix, the mechanical properties of the composites can be significantly improved. The introduction of Si C nanowires increases the fiber / matrix interfacial bonding strength, while the introduction of pyrolytic carbon on the Si C nanowires improves the fiber / matrix interfacial bonding strength. In addition, the silicon carbide nanowires and its interface regulation can effectively optimize the microstructure of the matrix mechanical behavior and fracture mode.
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