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采用不同工艺生长了CdTe/ZnS复合钝化层,制备了相应的长波HgCdTe栅控二极管器件并进行了不同条件下I-V测试分析.结果表明,标准工艺制备的器件界面存在较高面密度极性为正的固定电荷,在较高的反偏下形成较大的表面沟道漏电流,对器件性能具有重要的影响.通过钝化膜生长工艺的改进有效减小了器件界面固定电荷面密度,使HgCdTe表面从弱反型状态逐渐向平带状态转变,表面效应得到有效抑制,器件反向特性获得显著改善.此外,基于最优的工艺条件制备的器件界面态陷阱数量得到大幅降低,器件稳定性增强;同时器件R_0A随栅压未发生明显地变化.
CdSe / ZnS composite passivation layers were grown by different processes, and corresponding long-wave HgCdTe gate-controlled diode devices were prepared and tested under different conditions.The results show that there are high surface density polarities Positive fixed charge, forming a larger surface channel leakage current at higher reverse bias has an important effect on device performance.Improvement of passivation film growth process can effectively reduce the surface charge density of the device interface so that HgCdTe surface transition from weak inversion state to flat state gradually, the surface effect is effectively suppressed and the reverse characteristic of the device is significantly improved.In addition, the number of device interface state traps prepared based on the optimal process conditions is greatly reduced and the device stability is enhanced At the same time, the device R_0A did not change obviously with the gate voltage.