论文部分内容阅读
随着电子封装持续向小型化、高性能的方向发展,基于硅通孔的三维互连技术已经开始应用到闪存、图像传感器的制造中,硅通孔互连技术的可靠性问题越来越受到人们的关注。将硅通孔互连器件组装到PCB基板上,参照JEDEC电子封装可靠性试验的相关标准,通过温度循环试验、跌落试验和三个不同等级的湿度敏感性测试研究了硅通孔互连器件的可靠性。互连器件在温度循环试验和二、三级湿度敏感试验中表现出很好的可靠性,但部分样品在跌落试验和一级湿度敏感性测试中出现了失效。通过切片试验和扫描电子显微镜分析了器件失效机理并讨论了底部填充料对硅通孔互连器件可靠性的影响。
With the development of miniaturization and high performance of electronic packaging, three-dimensional (TSV) silicon via-based interconnect technology has been applied to the manufacture of flash memory and image sensors. The reliability of TSV interconnect technology is becoming more and more important People’s attention. Through the temperature cycling test, drop test and three different levels of humidity sensitivity test, the TSV interconnect device is assembled on the PCB substrate with reference to the related standards of the JEDEC electronic package reliability test reliability. Interconnect devices showed good reliability in temperature cycling tests and in second- and third-level humidity-sensitive tests, but some of them failed in drop test and first-level moisture sensitivity tests. The mechanism of device failure was analyzed by slice test and scanning electron microscope. The effect of underfill on the reliability of TSV interconnects was also discussed.