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随着半导体制造关键尺寸的继续缩小,硅片表面清洗要求变得更加严格。当前这一要求包括有效地去除硅片表面的纳米微粒(<100nm),并控制主要金属杂质不超过1E+10原子/cm~2。传统的擦片机和兆声湿式批量清洗工艺面临达到这些目标的挑战。单片清洗澡机在硅片表面产生更加均匀的声强分布,更有效地去除了纳米微粒。介绍了湿式批量洗洗机和单片清洗澡机的兆声清洗效果。湿式批量浸泡术和兆声能量单片清洗机结合可以有效地去80mm磨料微粒。
As the critical dimensions of semiconductor manufacturing continue to shrink, wafer surface cleaning requirements have become stricter. Current requirements include effective removal of nanoparticles (<100 nm) from the surface of the wafer and control of primary metal impurities up to 1E + 10 atoms / cm 2. Traditional wiping machines and megasonic wet batch cleaning processes face the challenge of meeting these goals. Monolithic cleaning bath on the silicon surface to produce a more uniform distribution of sound intensity, more effectively remove the nanoparticles. The megasonic cleaning effect of wet batch washing machine and single-slice cleaning bath was introduced. Wet bulk immersion and megasonic single chip cleaners combine to effectively remove 80mm abrasive particles.