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研制成 Ga As/ In Ga As异质结功率 FET(HFET) ,该器件是在常规的高 -低 -高分布 Ga As MESFET的基础上 ,在有源层的尾部引入 i-In Ga As层。采用 HFET研制的两级 C波功率放大器 ,在 5 .0～ 5 .5 GHz带内 ,当Vds=5 .5 V时 ,输出功率大于 3 2 .3 1 d Bm(0 .1 77W/ mm ) ,功率增益大于 1 9.3 d B,功率附加效率 (PAE)大于3 8.7% ,PAE最大达到 49.4% ,该放大器在 Vds=9.0 V时 ,输出功率大于 3 6.65 d Bm(0 .48W/ mm) ,功率增益大于 2 1 .6d B,PAE典型值 3 5 %
A GaAs / InGaAs heterojunction power FET (HFET) was developed based on the conventional high-low-high-distribution GaAs MESFET with the introduction of an i-InGaAs layer at the tail of the active layer. The two-stage C-wave power amplifier developed by HFET has an output power greater than 32.31 dBm (0.175 W / mm) when Vds = 5.5 V in the band of 5.0 to 5.5 GHz, , The power gain is greater than 1 9.3 d B, the PAE is greater than 3 8.7%, and the PAE is 49.4%. The output power of the amplifier is greater than 3 6.65 d Bm (0.48 W / mm) at Vds = 9.0 V, Power gain greater than 21.6d B, PAE typical 3 5%