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采用自制的制膜工具在n型硅片上制备了互穿聚合物网络 (IPN)绝缘层膜。用真空镀在IPN膜上蒸镀铝圆顶电极形成了Al/IPN/nSi(MIS)结构。在室温条件下测定了电容—电压 (C—V)特性。根据测定的C—V特性曲线计算了IPN膜的介电常数。
An interpenetrating polymer network (IPN) insulation film was prepared on n-type silicon wafer using a self-made filming tool. The Al / IPN / nSi (MIS) structure was formed by vapor deposition of an aluminum dome electrode on the IPN film by vacuum plating. Capacitance-voltage (C-V) characteristics were measured at room temperature. The dielectric constant of the IPN film was calculated based on the measured C-V characteristic curve.