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分析了工作于甚高频(VHF)频段的千瓦级横向扩散金属氧化物半导体(LDMOS)器件的输出功率、漏极效率及功率增益等关键参数在设计时应考虑的因素,在此基础上,采用0.8μm LDMOS工艺成功研制了一款工作于VHF频段的脉冲大功率硅LDMOS场效应晶体管(LDMOSFET)。设计了用于50~75 MHz频带的宽带匹配电路。研制的器件击穿电压为130 V。在工作电压为50 V,工作脉宽为1 ms,占空比为30%的工作条件下测试得到,器件的带内输出功率大于1 200 W,功率增益大于20 dB,漏极效率大于65%,抗驻波比大于10∶1。
The factors that should be considered in the design of the key parameters of output power, drain efficiency and power gain of kilowatt-class LDMOS devices operating in the VHF band are analyzed. Based on this, A 0.8μm LDMOS process has successfully developed a pulsed high power silicon LDMOS field effect transistor (LDMOSFET) operating in the VHF band. Broadband matching circuits designed for the 50-75 MHz band are designed. Developed device breakdown voltage of 130 V. The working voltage of 50 V, the working pulse width of 1 ms, the duty cycle of 30% of the working conditions were tested, the device's in-band output power is greater than 1 200 W, the power gain is greater than 20 dB, the drain efficiency is greater than 65% , Anti-standing wave ratio greater than 10: 1.