【摘 要】
：
已制成能同时测量物理和化学变量的多用途集成传感器芯片,该芯片尺寸为8×9mm~2,芯片上除含有作为信号调节、矩阵存取和输出缓冲的常规MOS 器件外还包含下列传感器:气体流量
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已制成能同时测量物理和化学变量的多用途集成传感器芯片,该芯片尺寸为8×9mm~2,芯片上除含有作为信号调节、矩阵存取和输出缓冲的常规MOS 器件外还包含下列传感器:气体流量传感器、红外传感器阵列、化学反应传感器、悬臂梁加速计、表面声波蒸汽传感器、触觉传感器阵列和红外电荷耦合器件摄象器.这个芯片的多传感功能利用了ZnO 薄膜的热电和压电效应.该蕊片的制造采用了常规的3μm NMOS 硅工艺与硅的微机械加工技术相结合.本文还叙述了相容的制造技术和传感器的性能.
Has been made to measure both physical and chemical multi-purpose integrated sensor chip, the chip size is 8 × 9mm ~ 2, the chip contains in addition to the conventional MOS device as a signal conditioning, matrix access and output buffer also includes the following sensors : Gas flow sensor, infrared sensor array, chemical reaction sensor, cantilever accelerometer, surface acoustic wave vapor sensor, touch sensor array and infrared charge-coupled device camera. The chip’s multi-sensing capabilities make use of the ZnO thin film thermoelectric and pressure Electrical effect The chip is fabricated using a combination of conventional 3μm NMOS silicon technology and silicon micromachining technology.The article also describes compatible manufacturing techniques and sensor performance.
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