论文部分内容阅读
室温下在p Si(1 0 0 )上采用直流反应磁控溅射法外延生长了ZnO薄膜。XRD测量表明了ZnO是高度c轴单一取向生长的 ,XRC测量则表明了ZnO的高质量。在室温下的PL测量中见到了带边发射 ,其强度与晶体质量有关。
ZnO films were epitaxially grown on p Si (100) by DC reactive magnetron sputtering at room temperature. XRD measurements show that ZnO is grown in a highly c-axis single orientation and XRC measurements indicate the high quality of ZnO. Plane-side emission was seen in PL measurements at room temperature and its intensity was related to the quality of the crystal.