本文介绍了真空微电子器件场发射阴极硅尖阵列的制备工艺技术。采用硅的各向异性腐蚀工艺和氧化削尖技术制成了形状和发射性能均较好的硅尖阵列，测试结果表明，起始发射电压为５～６Ｖ，发射电流在阳极电压为２０Ｖ时为０．５ｍＡ，反向击穿电压为７５Ｖ。 In this paper, the preparation technology of field emission cathode silicon tip array for vacuum microelectronic devices is introduced. Silicon anisotropy etching process and oxidation sharpening technology made of silicon sharp shape and emission performance are good, the test results show that the initial emission voltage of 5 ~ 6V, the emission current at an anode voltage of 20V is 0.5mA, reverse breakdown voltage of 75V.