论文部分内容阅读
A new single-element layered two-dimensional semiconductor:black arsenic
【出 处】
:
半导体学报(英文版)
【发表日期】
:
2020年8期
其他文献
A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm2 and breakdown voltage exceeding 1.5 kV is designed and fabricated.Numerical simulations are ca