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利用透射电子显微镜(TEM)观测a-Si:H 薄膜在不同温度下生长的分形结构。实验方法为原位动态技术。对分形结构的TEM形貌像用Sandbox方法计算了其分形维数。450℃时,形成具有类似分叉状的分形结构,分形线数d_f=1.69;800℃时,形成岛状分形结构,分形维数d_f=1.76。实验结果表明,分形结构的形成与薄膜物性的变化相联系。文中还对分形结构与a =Si:H 薄膜晶化的关系进行了讨论。
The fractal structure of a-Si: H films grown at different temperatures was observed by transmission electron microscopy (TEM). Experimental method for in situ dynamic technology. The fractal dimension of fractal structure was calculated by Sandbox method. At 450 ℃, a fractal structure with a similar bifurcation shape was formed. The number of fractal lines was d = 1.69. Island fractal structure was formed at 800 ℃ with fractal dimension df = 1.76. The experimental results show that the formation of fractal structure is related to the change of physical properties of the film. The relationship between the fractal structure and a = Si: H thin film crystallization is also discussed.