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采用柱状靶多弧直流磁控溅射法 ,10 0℃基底温度下在玻璃衬底上制备了纳米氮化铜 (Cu3N)薄膜 .用x射线衍射研究了不同氮气分压对Cu3N薄膜晶体结构及晶粒尺寸的影响 .结果显示薄膜由Cu3N和Cu的纳米微晶复合而成 ,其中Cu3N纳米微晶具有立方反ReO3结构 .通过原子力显微镜对薄膜表征显示 ,膜表面比较光滑 ,具有较低的粗糙度 .x射线光电子能谱对薄膜表面的成分分析表明 ,Cu3N薄膜表面铜元素同时以 +1价和 +2价存在 .Cu3N的Cu2p3 2 ,Cu2p1 2 及N1s峰分别位于 932 7,95 2 7和 399 9eV ,Cu2p原子自旋 轨道耦合裂分能量间距为 2 0eV .用台阶仪和四探针方法测量了薄膜的厚度及电阻率 ,薄膜的沉积速率和电阻率在很大程度上受到氮气分压的调制 .
Nanocrystalline copper nitride (Cu3N) thin films were prepared on glass substrates by columnar target multi-arc DC magnetron sputtering at different temperatures of 100 ℃ .Analysis of crystal structure of Cu3N thin films by different nitrogen partial pressures The results show that the film is composed of Cu3N and Cu nanocrystals, in which the Cu3N nanocrystals have a cubic anti-ReO3 structure.The morphology of the films by atomic force microscopy shows that the film surface is relatively smooth and has a relatively low roughness Degree.X-ray photoelectron spectroscopy analysis of the composition of the film surface shows that Cu3N thin film surface at the same time with the price of +1 and +2 valence.Cu3N the Cu2p3 2, Cu2p1 2 and N1s peak at 932 7,95 2 7 and 399 9eV, the spin-orbit coupling of Cu2p atom has an energy gap of 20eV.The thickness and the resistivity of the films were measured by the step and quadrupole methods. The deposition rate and the resistivity of the films were largely affected by the partial pressure of nitrogen Modulation.