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给出了一种采用Г型输入匹配网络的源简并共源低噪声放大器电路结构,分析了在低功耗情况下,高频寄生效应对低噪声放大器(LNA)输入阻抗及噪声特性的影响,并采用此结构设计了一款工作于L波段的低功耗低噪声放大器。采用CMOS 0.18μm工艺,设计了完整的ESD保护电路,并进行了QFN封装。测试结果表明,在1.57 GHz工作频率下,该低噪声放大器的输入回波损耗小于-30 dB,输出回波损耗小于-14 dB,增益为15.5 dB,噪声系数(NF)为2.4 dB,输入三阶交调点(IIP3)约为-8 dBm。当工作电压为1.5 V时,功耗仅为0.9 mW。
A circuit structure of source degenerate and common source low noise amplifier with Г type input matching network is given. The effect of high frequency parasitic effect on the input impedance and noise characteristics of low noise amplifier (LNA) under low power consumption is analyzed , And uses this structure to design a L-band low-power low-noise amplifier. CMOS 0.18μm process, designed a complete ESD protection circuit, and QFN package. The test results show that the low-noise amplifier has an input return loss of less than -30 dB, an output return loss of less than -14 dB, a gain of 15.5 dB and a noise figure (NF) of 2.4 dB at a frequency of 1.57 GHz. Inputs three The order intercept point (IIP3) is about -8 dBm. When the operating voltage of 1.5 V, the power consumption is only 0.9 mW.