论文部分内容阅读
高质量的MOCVD外延材料是研制高性能半导体光电器件的基础。通过制作简单的量子阱结构,利用光荧光系统进行快速表征,得到Ⅴ/Ⅲ比不但会影响PL的强度,还会影响片内均匀性的结论。根据标准偏差统计法,确定了InGaAs量子阱外延的最佳Ⅴ/Ⅲ比为35。基于优化的外延参数,制备了波长为980nm的半导体激光器,在15A脉冲电流下,腔面未镀膜时器件的平均输出功率为9.6W,中心波长为977.2nm。研究结果为半导体激光器的研制提供了一种快速有效的方法。
High-quality MOCVD epitaxial material is the basis for the development of high-performance semiconductor optoelectronic devices. Through the fabrication of a simple quantum well structure and the rapid characterization using an optical fluorescence system, it is concluded that Ⅴ / Ⅲ ratio not only affects the strength of PL but also affects on-chip uniformity. According to the standard deviation statistical method, the best Ⅴ / Ⅲ ratio of InGaAs quantum well epitaxy is 35. Based on the optimized epitaxial parameters, a semiconductor laser with a wavelength of 980 nm was fabricated. Under 15 A pulse current, the average output power of the device when the cavity was uncoated was 9.6 W and the center wavelength was 977.2 nm. The results provide a fast and effective method for the development of semiconductor lasers.