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In spite of their extraordinary performance,AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability.Devices under accelerated DC stress tests (off-state,V DS=0 state,and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs.All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref.[1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech.Digest p.415).However,under the on-state condition,the devices are suffering from both inverse piezoelectric effects and hot electron effects,and so to improve the reliability of the devices both effects should be taken into consideration.
In spite of their extraordinary performance, AlGaN / GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, V DS = 0 state, and on- state step-stress) help us identify the degradation mechanisms of the AlGaN / GaN HEMTs. All findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo JA 2006 IEEE IDEM Tech.Digest p.415). Under, on the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both both effects should be taken into consideration.