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所谓表面“沟道漏电”,是指P型基区表面附近的氧化层中引入了带正电的离子,如Na~+离子之类,由于静电感应,在P型基区表面会感生出一层负电荷,形成N型沟道,造成沟道漏电。它的最大特征是单结特性蠕动;击穿电压降低。 天津半导体器件厂的同志们根据金在半导体中能起复合中心作用,也能起表面复合中心的作用,把金掺入硅中将硅表面沾污的带电离子“吃掉”。虽然道理还不太清楚,
The so-called surface “channel leakage” refers to the introduction of positively charged ions, such as Na ~ + ions, in the oxide layer near the surface of the P-type base region. Due to the electrostatic induction, a layer is induced on the surface of the P-type base region Negative charge to form N-type channel, resulting in channel leakage. Its biggest feature is the single-junction characteristics of peristaltic; breakdown voltage decreases. Comrades from Tianjin Semiconductor Device Factory can play the role of a compound center according to gold in semiconductors, and can also play the role of a surface recombination center to “dice up” the charged ions contaminated by the silicon surface with silicon doped with gold. Although the reason is not clear,