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利用等离子体理论研究了电路中微波等离子体运动对电容元件的影响,给出了可能引起电路扰乱状态的参量条件.当微波等离子体较稀薄时,且微波的频率或等离子体电子的渡越时间高到一定程度时,扰乱阈值与微波频率的平方成正比;如果微波的频率或等离子体电子的渡越时间低到一定程度时,其电场的特性接近直流特性,扰乱阚值与微波频率没有明显的依赖关系.从总体上看,微波频率越低,越容易扰乱集成电路的工作状态.如果等离子体频率与高功率微波频率相接近,则会产生共振效应,此时等离子体电子的振荡的幅值会大幅度提高,更容易扰乱电路的工作状态.
The influence of the microwave plasma motion on the capacitive element in the circuit was studied by using the plasma theory, and the parameter conditions that could cause the circuit disturbance were given.When the microwave plasma is thinner, the frequency of the microwave or the transit time of the plasma electron To a certain extent, the disturbing threshold is proportional to the square of the microwave frequency. If the microwave frequency or plasma electron transit time is low to a certain extent, the electric field characteristics are close to the DC characteristics, the disturbing threshold and the microwave frequency are not obvious Generally speaking, the lower the microwave frequency, the more likely it is to disturb the working state of the integrated circuit.If the plasma frequency is close to the high-power microwave frequency, a resonance effect will occur, in which case the oscillated amplitude of the plasma electron The value will be greatly increased, more likely to disturb the working state of the circuit.