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用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明,当反应气体中SiH4浓度在3.6%—50%之间大范围变化时,μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明,在SiH4浓度较大时制备的薄膜,其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH4气体高度分解,等离子体高度电离.
The microcrystalline structure of hydrogenated microcrystalline silicon (μc-Si: H) with high crystallized volume fraction was prepared by hot filament assisted microwave electron cyclotron resonance chemical vapor deposition method. The microstructure of the sample was analyzed by Raman scattering and X-ray diffraction. When the concentration of SiH4 in the reaction gas varied widely from 3.6% to 50%, the μc-Si: H films all had high crystallization volume fraction.Further analysis showed that the thin films prepared with larger concentration of SiH4 The structure is dominated by the transition phase of amorphous-microcrystalline.The main reason that the film is easy to crystallize or grow into the transition phase is that microwave electron cyclotron resonance makes the SiH4 gas highly decomposed and the plasma highly ionized.