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本文采用ＰＣＴ试验方法ＳＤ１３００５型ＮＰＮ高反压大功率晶体管进行了加速寿命试验，发现ＢＶｃｅ０是其退化的最敏感参数。并利用自行研究开发的《微电子器件可靠性指标数据处理计算机软件》对试验数据进行统计分析，得知该器件的失效分布符合威布尔分布，同时评估了不同应力下产品的可靠性寿命特征，外推出１００％相对湿度时，室温（２５℃）下该产品的寿命特征。对失效器件的管芯进行显微分析并参照ＢＶｃｅ０异常击穿特性曲线确定了器件的失效机理。
In this paper, PCT test method SD13005 type NPN high-voltage high-power transistors were accelerated life test and found BVce0 is the most sensitive parameters of its degradation. The statistical analysis of the test data using the “Microelectronic Device Reliability Index Data Processing Computer Software” researched and developed by ourselves shows that the device’s failure distribution conforms to Weibull distribution and the reliability life characteristics of products under different stress are evaluated. Extrapolated to 100% relative humidity at room temperature (25 ℃) the life characteristics of the product. The breakdown mechanism of the device was analyzed by microscopic analysis of the die of the failed device and by referring to the abnormal breakdown characteristic of BVce0.