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低噪声放大器(LNA)是无线通信系统的重要组成部分。采用TSMC 0.18μm互补金属氧化物半导体(CMOS)工艺,设计了一款能够满足LTE和802.11 b/g/e等多种无线通信应用标准的2~5 GHz的宽带CMOS LNA。为了实现宽带输入匹配与足够大的宽带功率增益,并在有限的功耗下获得较低的噪声系数,设计的LNA使用了两级电阻反馈、电流复用结构和噪声消除技术。后仿真结果表明,在1.5 V直流电源供电下,电路功耗仅9.03 m W,低噪声放大器芯片核心面积仅为0.76 mm×0.81 mm,在2~5 GHz频段内,噪声系数为2.46~2.73 d B,功率增益大于16.7 d B,输入输出反射系数均低于-10 d B。因此,所设计的低噪声放大器,性能优良,适用于低噪声、低功耗的宽带无线通信产品。
Low noise amplifier (LNA) is an important part of wireless communication systems. The TSMC 0.18μm CMOS technology is used to design a 2 ~ 5 GHz wideband CMOS LNA that can meet the requirements of many wireless communication applications such as LTE and 802.11 b / g / e. To achieve broadband input matching and large enough wideband power gain with low power consumption and limited noise figure, the LNA is designed with two stages of resistive feedback, current-multiplexing architecture and noise cancellation. The simulation results show that the circuit consumes only 9.03 mW at 1.5 V DC power supply, and the core area of the LNA chip is only 0.76 mm × 0.81 mm. The noise figure of 2.46 ~ 2.73 d in the 2 ~ 5 GHz band B, the power gain is greater than 16.7 d B, the input and output reflection coefficients are less than -10 d B. Therefore, the design of low-noise amplifier, excellent performance, suitable for low-noise, low-power broadband wireless communications products.