演示了半导体纳米线阵列中的室温紫外激射。利用简单的蒸汽传输冷凝技术制造了生长在蓝宝石基底上的自组织<0001>定向氧化锌纳米线。这种宽带隙半导体纳米线形成了直径20~50nm、长度达10μm的自然激光腔。在光激励下,观察到385nm的面发射激光行为,辐射线宽小于0.3nm。纳米线的化学灵活性和一维性使其成为理想的小型化激光光源。这种短波长纳米激光器可能有很多应用,包括光计算、信息存储和微量分析等。 Room temperature UV lasing in semiconductor nanowire arrays is demonstrated. Self-organized <0001> oriented zinc oxide nanowires grown on sapphire substrates were fabricated using simple vapor transport condensation techniques. This wide band gap semiconductor nanowire forms a natural laser cavity with a diameter of 20-50 nm and a length of 10 μm. Under photoexcitation, the surface emission laser behavior of 385nm was observed with the radiation width less than 0.3nm. The chemical flexibility and one-dimensional nanowire make it an ideal miniaturized laser light source. This short wavelength nanolaser may have many applications, including optical computing, information storage and trace analysis.