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本文讨论了如何从半导体器件的材料和几何参数来计算该器件的伏—安特性等外特性的数学模型,将连续性方程和柏松方程化为联立的椭园型偏微分方程并进行适当变换。本文还介绍了几种数值计算方法,并讨论了收敛性及边界条件。
This article discusses how to calculate the device’s volt-ampere characteristics and other mathematical models from the material and geometrical parameters of the semiconductor device. The continuity equation and the Pesson equation are modeled as simultaneous elliptic partial differential equations and the appropriate Transform. This paper also introduced several numerical methods, and discussed the convergence and boundary conditions.