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随着增加强型650V硅基氮化镓晶体管GS65516T问世,GaN Systems公司的增强型硅基氮化镓晶体管产品再增新品,GS65516T据称能提供60A市场最高的电流能力。GS65516T功率开关采用了今年3月刚刚发布的专利技术,具有顶端和侧面降温功能的设计,器件可使用传统的散热片或风扇进行降温。该公司称,650V E-HEMT GS65516T性能优越,具有反向电流能力,恢复损耗为0。双门衬垫的设计也使布局达到最优化。GS65516T适用于高频率、高功率转换效率的应用领域,如机载充电器,400V直流转换器,反相逆变器,不间断电源,VFD驱动,交流-直流充电电源器(PFC电路和主电源和小型的超高频VHF电源适配器。
With the advent of the powerful 650V silicon-based Gallium Nitride Transistor, the GS65516T, GaN Systems’ enhanced Gallium Nitride Transistor products are further augmented. The GS65516T is said to offer the highest current capability in the 60A market. Featuring the patented technology just released in March this year, the GS65516T power switch features a top-side and side-cooled design that uses traditional heat sinks or fans for cooling. The company said the 650V E-HEMT GS65516T delivers superior performance with reverse current capability and zero recovery loss. The design of the two-door gasket also optimizes the layout. The GS65516T is designed for high frequency, high power conversion efficiency applications such as onboard chargers, 400V DC converters, inverting inverters, uninterruptible power supplies, VFD drivers, AC-DC charging power supplies (PFC circuits and main power supplies And small UHF VHF power adapter.