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在传统的基于设计电路的ESD(Electro-Static Discharge)损伤仿真中,通常不考虑版图物理结构的影响,其仿真结果往往与实际损伤情况出现较大偏差,因此提出了一种考虑版图设计中寄生参数的集成电路ESD损伤的仿真方法.首先给出了仿真应用的具体分析流程.然后按照经验公式提取法明确了各种寄生参数的计算模型.最后,以集成运算放大器LM741为例,对其进行了ESD损伤模拟,再通过击打实验、失效定位与电性能测试,结果表明:仿真与实验结果具有较好的一致性,验证了该方法的有效性.
In the traditional design of circuit ESD-based ESD (Electro-Static Discharge) damage simulation, usually do not take into account the layout of the physical structure of the impact of the simulation results are often greatly deviated from the actual damage, and thus put forward a layout design to consider parasitic Parameters of the integrated circuit ESD damage simulation method.First of all, the simulation analysis of the application of the specific process is given.And then empirical formula extraction method to determine a variety of parasitic parameters of the calculation model.Finally, the integrated operational amplifier LM741, for example, to its The ESD damage simulation was carried out, and then the impact test, the failure localization and the electrical performance test were carried out. The results show that the simulation and experimental results are in good agreement and the validity of the method is verified.