Gamma-ray(γ-ray)radiation for silicon single photon avalanche diodes(Si SPADs)is evaluated,with total dose of 100 krad(Si)and dose rate of 50 rad(Si)/s by usin
To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication(SAM)avalanche phot
In this study,truncated octahedron(TO)structure is selected for further analysis and we focus on 38-atom Pd-Pt-Ag trimetallic nanoalloys.The best chemical order