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A novel empirical model for large-signal modeling of an RF-MOSFET is proposed.The proposed model is validated in the DC,AC,small-signal and large-signal characteristics of a 32-fmger nMOSFET fabricated in SMIC’s 0.18μm RF CMOS technology.The power dissipation caused by self-heating is described.Excellent agreement is achieved between simulation and measurement for DC,S-parameters(50 MHz-40 GHz),and power characteristics, which shows that our model is accurate and reliable.
A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-fmger nMOSFET fabricated in SMIC’s 0.18 μm RF CMOS technology The power dissipation caused by self-heating is described. Excellent uniformity is achieved between simulation and measurement for DC, S-parameters (50 MHz-40 GHz), and power characteristics, which shows that our model is accurate and reliable.