论文部分内容阅读
Double-barrier Au/Al2O3/Al/Al2O3/Al and Si-based Au/SiO2/Si light emission tunnel junctions were constructed. Light emission from these junctions was observed successfully. In this paper,we introduced simply the fabrication process of the double-barrier MIMJ and MIS J, and analyzed especially the I- V property and the negative resistance phenomenon (NRP) of these junctions. We concluded that the NRP resulted from obstructive effect of SPP to the electron’s tunneling in the insulator layer, which will widen the barrier’s width. The NRP was closely connected with the light emission. The SPP was a bridge of light emission and NRP of the junction. Discussion on the NRP was helpful to understand the electron tunneling characteristic and the light emission physical picture of these junctions.