论文部分内容阅读
研制成功了可商业化的 75mm单片超高真空化学气相淀积锗硅外延设备SGE50 0 ,并生长了器件级SiGeHBT材料 .研制了具有优良小电流特性的多晶发射极双台面微波功率SiGeHBT器件 ,其性能为 :β =60 @VCE/IC=9V/ 30 0 μA ,β=1 0 0 @5V/ 50mA ,BVCBO=2 2V ,ft/ fmax=5 4GHz/ 7 7GHz @1 0指 ,3V/ 1 0mA .多晶发射极可进一步提供直流和射频性能的折衷 ,该工艺总共只有 6步光刻 ,与CMOS工艺兼容且 (因多晶发射极 )无需发射极外延层的生长 ,这些优点使其适合于商业化生产 .利用 60指和 1 2 0指的SiGeHBT制作了微波锗硅功率放大器 .60指功放在 90 0MHz和 3 5V/ 0 2A偏置时在 1dB压缩点给出P1dB/Gp/PAE =2 2dBm/ 1 1dB/ 2 6 1 % .1 2 0指功放 90 0MHz工作时给出了Pout/Gp/PAE =33 3dBm (2 1W ) / 1 0 3dB/ 33 9% @1 1V/ 0 52A .
A commercially available 75mm monolithic ultra-high-vacuum SiGe epitaxial device SGE50 0 was grown and a device-grade SiGe HBT material was grown.The polycrystalline emitter dual-surface microwave power SiGeHBT device with excellent low current characteristics , The performance is: β = 60 @ VCE / IC = 9V / 30 0 μA, β = 100 0V / 50mA, BVCBO = 2 2V, ft / fmax = 5 4GHz / 7 7GHz @ 1 0 means 3V / 1 0mA. Polysilicon emitters further provide a trade-off between DC and RF performance with a total of only 6 steps of lithography, compatible with CMOS processes and without the need for growth of emitter epitaxial layers (due to polycrystalline emitters) Suitable for commercial production using 60 fingers and 120 SiGeHBT refers to the manufacture of microwave silicon germanium power amplifier .60 refers to the amplifier at 90 0MHz and 3 5V / 0 2A bias at 1dB compression point gives P1dB / Gp / PAE = 2 2dBm / 1 1dB / 2 6 1%. 120 refers to the amplifier 90 0MHz work is given Pout / Gp / PAE = 33 3dBm (2 1W) / 1 0 3dB / 33 9% @ 1 1V / 0 52A .