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提出了一种具有n+浮空层的横向super junction结构,此结构通过磷或砷离子注入在高阻衬底上形成n+浮空层来消除传统横向super junction结构中的衬底辅助耗尽效应.这种效应来源于p型的衬底辅助耗尽了superjunction区的n型层,使p与n之间的电荷不能平衡.n+层的REBULF效应通过使漏端电场减小,体电场重新分布而使新结构中的衬底承担了更多的电压.结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点.
A lateral super junction structure with an n + floating layer is proposed. This structure forms n + floating layer on the high resistance substrate by phosphorus or arsenic ion implantation to eliminate the substrate assisted depletion effect in the conventional lateral super junction structure. This effect is due to the fact that the p-type substrate aids depletion of the n-type layer in the superjunction region so that the charge between p and n can not be balanced. The REBULF effect of the n + layer reduces the electric field at the drain and redistributes the body electric field So that the substrate in the new structure to bear more voltage.The results show that this structure has a high breakdown voltage, low on-resistance and drift region charge balance characteristics.