论文部分内容阅读
IGCT被视为大功率应用的理想开关器件,其主要优势不仅体现在高可靠性上,同时,其低损耗使得系统损耗较低。在三电平拓扑中,IGCT与目前最高水平的IGBT在器件损耗方面的对比结果为IGCT的较低。由于IGCT器件是基于晶闸管特性,系统中独立的箝位电路设计是必须的,以实现其与续流二极管配合工作时的高可靠性。文中不仅提到了对故障现象的特别考虑,重点介绍了外围电路设计和故障电流保护策略,而且介绍了IGCT目前最新的研发成果。在朝更大功率容量方向发展方面,IGCT器件具有很大的潜力。
IGCT is considered as an ideal switching device for high-power applications, its main advantage not only reflected in the high reliability, while its low loss makes the system lower losses. In the three-level topology, the IGCT has the lowest IGCT compared with the highest current IGBT in terms of device losses. Because IGCT devices are based on thyristor characteristics, a separate clamp circuit design in the system is necessary to achieve high reliability when working with flywheel diodes. The paper not only refers to the special consideration of the fault phenomenon, focuses on the peripheral circuit design and fault current protection strategy, but also introduces the latest research results of IGCT. IGCT devices have great potential in terms of moving towards higher power capacity.