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利用自制立式HVPE设备,在蓝宝石衬底上进行了不同载气情况下AlN的生长试验,生长温度1 000℃。在采用H2作载气情况下,由于预反应严重,没能生长出AlN薄膜,只得到一些白色AlN粉末;而在分别采用Ar和N2作载气的情况下,则成功生长出AlN薄膜,但由于生长温度低,AlN生长均为岛状生长模式。在生长速率较快时,AlN薄膜是以〈0001〉AlN为主的AlN多晶;而在较低生长速率下,得到的AlN薄膜由为〈0001〉取向的AlN岛组成。试验还发现:用Ar作载气更有利于AlN晶核的横向生长,用N2作载气则有相对高得多的AlN成核密度。
Using self-made vertical HVPE equipment, AlN growth experiments were carried out on sapphire substrates under different carrier gas conditions, with a growth temperature of 1000 ° C. In the case of using H2 as the carrier gas, AlN film could not be grown due to severe pre-reaction, and only some AlN powder was obtained. However, AlN film was successfully grown in the case of using Ar and N2 as carriers, respectively Due to the low growth temperature, AlN growth is island growth. At faster growth rates, AlN films are AlN-dominated AlN polycrystalline; whereas at lower growth rates the resulting AlN films consist of AlN islands oriented at <0001>. The experiment also found that: Ar carrier gas is more conducive to the lateral growth of AlN crystal nucleus, N2 carrier gas has a relatively high AlN nucleation density.