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进入21世纪,2004年集成电路的特征尺寸已进入90 nm节点,标志着微电子进入一个新的纪元,即进入了纳电子时代。介绍和总结了纳电子的新进展,包括纳电子的两条发展技术路线:其一是继续按自上而下的方法,以CMOS技术为基础,不断改变栅结构,改变沟道材料,增强控制电子的能力;其二是自下而上的新思路,采用新的器件结构,向自组装发展。此外,还介绍了“后CMOS”器件的工作原理、当前的实验以及和MOSFET相关的性能和面临的挑战。并预计了纳电子未来发展的趋势。
Entering the 21st century, the feature size of the integrated circuit has entered the 90 nm node in 2004, marking that the microelectronics has entered a new era, that is, it has entered the electronic age. Introduced and summarized the new progress of nanoelectronics, including two development nanotechnology electronic technology route: First, continue to top-down approach to CMOS technology as a basis, continue to change the gate structure, change the channel material and enhance control Electronic capabilities; the other is a new idea from the bottom up, the use of new device structure, self-assembly development. In addition, the working principle of “post-CMOS” devices, current experiments, and MOSFET-related performance and challenges are presented. And is expected to nanoelectronics trends in the future.