采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度Ts/Tm(Ts是沉积温度,Tm是材料熔点)的依赖性与薄膜生长方式转变行为.随着Ts/Tm增加,薄膜表面粗糙度增加,而表征粗糙度随时间演化特征的生长指数β历经了先减小再增加的过程.β对Ts/Tm的依赖关系反映了薄膜生长方式的转变行为,即薄膜生长依次由随机生长方式向表面扩散驱动生长方式与异常标度行为生长方式转变.在低于体扩散控制薄膜生长的温度时,晶界扩散机理导致多晶薄膜的表面粗化的异常标度行为. Atomic force microscopy was used to study the dependence of the coarsening behavior of magnetron sputtered polycrystalline thin films on the normalized deposition temperature Ts / Tm (Ts is the deposition temperature and Tm is the melting point of the material) Tm increased, the surface roughness of the film increased, while the growth index β, which characterizes the evolution of roughness over time, first decreased and then increased.The dependence of β on Ts / Tm reflected the transformation behavior of the film growth mode, that is, the film Growth shifts from random growth mode to surface-driven growth mode and abnormal scaling behavior growth mode, and the grain boundary diffusion mechanism leads to the abnormal scaling behavior of the surface roughening of the polycrystalline thin films below the temperature at which the bulk diffusion control film grows .