通过RF磁控溅射技术制备不同溅射气压下的ITO薄膜,对其电阻率、光学透过率、XRD图、AFM图和划擦行为进行了研究。薄膜和基板的附着力通过划擦测试进行表征,重点研究了薄膜划擦测试的不同阶段的特征。研究表明随着Ar溅射气压的下降,薄膜附着力下降。而且,ITO薄膜的表面形貌和电阻率强烈的依赖于Ar气压。低温沉积ITO薄膜均为非晶态,在溅射气压0.8 Pa时得到电阻率(1.25×10~(-3)Ω·cm)和高可见光透过率薄膜(90%)。研究结果表明该薄膜光学禁带约为3.85 eV,电阻率主要受载流子浓度控制,受溅射气压的变化影响有限。 ITO films were prepared by RF magnetron sputtering at different sputtering pressures, and their resistivity, optical transmittance, XRD patterns, AFM patterns and scratches were studied. The adhesion of the film to the substrate is characterized by a scratch test, focusing on the characteristics of the different stages of the film scratch test. The results show that with the decrease of Ar sputtering pressure, the film adhesion decreases. Moreover, the surface morphology and the resistivity of the ITO film strongly depend on the Ar gas pressure. The low temperature deposited ITO films were all amorphous. The resistivity (1.25 × 10 -3 Ω · cm) and high visible transmittance film (90%) were obtained at a sputtering pressure of 0.8 Pa. The results show that the optical band gap of the film is about 3.85 eV, and the resistivity is mainly controlled by the carrier concentration, which is limited by the change of sputtering pressure.