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本文利用计算流体力学(CFD)方法对某等离子增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)反应室流场进行了数值模拟研究,通过改变匀流板布孔方式、进气管与匀流板距离、进气管出口形状和角度、压强等条件,研究反应器内流动的相应变化,给出了获得薄膜生长所需的最佳输运过程的条件,以形成稳定均匀的流场,从而保证薄膜的生长质量。根据本文优化后的匀流装置已实际加工应用,取得良好效果。
In this paper, the flow field in a plasma enhanced chemical vapor deposition (PECVD) chamber was numerically simulated by the computational fluid dynamics (CFD) method. By changing the way of the baffle plate hole, Distance, intake pipe outlet shape and angle, pressure and other conditions to study the corresponding changes in the reactor flow, given the film obtained the optimal transport conditions for the growth process to form a stable and uniform flow field, so as to ensure that the film The quality of growth. According to the optimization of the current device has been the actual processing and application, and achieved good results.