日本富士通研究所与富士通公司联合开发出能快速绘制LSI线路图的电子束曝光技术。要比以往的技术快20倍。新技术可对线宽0.13μm级的线路图这样大的面积一次曝光。通过采用特殊元件扩散射束,可对很宽的范围照射光束。与以往的技术相比,能以接触孔为20倍、晶体管的控制电级为10倍、布线层为5～10倍左右的快速进行处理。 Fujitsu Japan Fujitsu and Fujitsu Co., Ltd. jointly developed to quickly draw the LSI circuit of electron beam exposure technology. 20 times faster than in the past. The new technology can line width 0.13μm level circuit such a large area of ​​one exposure. By using special elements to diffuse the beam, the beam can be irradiated over a wide range. Compared with the prior art, the contact hole can be processed 20 times faster, the control level of the transistor 10 times, and the wiring layer 5 to 10 times faster.