论文部分内容阅读
以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了三种不同沟道宽长比的有机薄膜晶体管器件。通过对这三种器件的电学特性进行对比,分析了不同沟道宽长比对器件电学性能的影响。结果表明,沟道宽长比对器件的迁移率影响很小,阈值电压随着宽长比的增大而减小,漏电流随沟道宽长比的增大而增大;当源漏极间电压在一定范围内时,开态电流也随沟道宽长比的增大而增大。
Three kinds of organic thin film transistor devices with different channel width-length ratios were fabricated using copper phthalocyanine as the active layer, silicon dioxide as the insulating layer, and titanium / gold as the electrodes. By comparing the electrical characteristics of the three devices, the influence of different channel width-length-ratio on the electrical performance of the devices is analyzed. The results show that the channel width to length ratio has little influence on the mobility of the device, the threshold voltage decreases with the increase of the aspect ratio, and the leakage current increases with the increase of channel width to length ratio. When the voltage is within a certain range, the on-state current also increases as the channel width-to-length ratio increases.