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运用相平衡分析的方法，对（Ｇａ，Ｉｎ）Ａｓ半导体ＭＯＶＰＥ生长过程中源物质热分解后的气相物种分压进行了分析，得到了沉积物种的生成率随各生长参数的变化规律，同时对气相物种分压与半导体碳污染的关系也进行了分析。
By using the method of phase equilibrium analysis, the partial pressure of gaseous species after thermal decomposition of source material in (Ga, In) As semiconductor during the growth process of MOVPE was analyzed, and the changing rule of the formation rate of deposited species with each growth parameter was obtained. The relationship between gas species partial pressure and semiconductor carbon pollution is also analyzed.