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利用电感耦合等离子体化学气相沉积在室温下制备了Si薄膜,用拉曼谱对样品的结构进行了表征,502cm?1附近散射峰的出现说明在样品中形成了纳米结晶相.用原子力显微镜观察样品表面形貌发现,在合适的等离子体条件下制备的样品,其表面由随机均匀排列的高密度Si锥组成,Si锥的高度为30~40nm,底面平均直径约为200nm.场电子发射测量结果显示样品具有良好的电子发射特性,开启电压为7~10V/μm.
Si films were prepared by inductively coupled plasma-enhanced chemical vapor deposition at room temperature, and the structure of the samples was characterized by Raman spectroscopy. The appearance of the scattering peak near 502 cm -1 indicates the formation of nanocrystalline phase in the sample. The surface morphology of the sample was found to be a sample prepared under suitable plasma conditions, the surface of which consisted of high density Si cones randomly arranged uniformly, the height of the Si cone was 30 to 40 nm and the average diameter of the bottom surface was about 200 nm. The field electron emission measurement The results show that the sample has good electron emission characteristics, the turn-on voltage is 7 ~ 10V / μm.