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利用溶胶凝胶法在Al_2O_3衬底上制备出了c轴择优取向的钼掺杂氧化锌(MZO)透明导电薄膜,研究了,钼的掺杂量(0～1 at%)对钼掺杂氧化锌薄膜光电性能的影响。研究结果表明:所制备的薄膜为六方纤锌矿型结构且表面平整、致密。通过高温真空退火,MZO薄膜的电阻率明显降低。且随着钼含量的增加,MZO薄膜的电阻率呈现出先减小后增大的趋势,当钼含量为0.4at%时,获得最小电阻率为0.13Ωcm。薄膜在近红外区域(800～2000 nm)的平均透过率大于85%,这可以有效地拓宽光电器件的光谱范围。
A c-axis oriented Molybdenum-doped zinc oxide (MZO) transparent conductive thin film was prepared on the Al 2 O 3 substrate by sol-gel method. The effects of doping amount of molybdenum (0-1 at%) on molybdenum- Effect of Zinc Film Optical Properties. The results show that: the prepared film is hexagonal wurtzite structure and the surface is smooth, dense. The resistivity of the MZO thin film is significantly reduced by high-temperature vacuum annealing. With the increase of molybdenum content, the resistivity of MZO thin film tends to decrease first and then increase, and the minimum resistivity is 0.13 Ωcm when the molybdenum content is 0.4 at%. The average transmittance of the film in the near infrared region (800 ~ 2000 nm) is more than 85%, which can effectively broaden the spectral range of the optoelectronic device.