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基于半导体器件仿真工具SILVACO TCAD,研究了三种常见的基区Ge组分分布(矩形、梯形和三角形)对多指功率SiGe异质结双极型晶体管(HBT)的热学特性的影响。结果表明,基区Ge组分为梯形分布和三角形分布的多指SiGe HBT的增益随温度变化比较平缓,各发射极指的峰值温度明显小于矩形分布的各指峰值温度,器件纵向和表面温度分布也更加均匀,因此,与矩形分布相比,梯形分布和三角形分布的多指SiGe HBT在热学特性上有了很大的改善,电学特性也相对热稳定。在这三种结构中,梯形分布可以更好地兼顾增益特性和热学特性。
Based on SILVACO TCAD, a semiconductor device simulation tool, the influence of three common Ge base distributions (rectangular, trapezoidal and triangular) on the thermal properties of multi-finger power SiGe HBTs was investigated. The results show that the gain of multi-finger SiGe HBT with Ge component in the base region is trapezoid and triangular with the change of temperature being relatively flat. The peak temperature of each emitter finger is significantly less than the peak temperature of each finger of the rectangular distribution, longitudinal and surface temperature distribution of the device Therefore, compared with the rectangular distribution, the multi-finger SiGe HBT with the trapezoidal distribution and the triangular distribution has a great improvement in the thermal characteristics and the electrical characteristics are also relatively thermally stable. In these three structures, the trapezoidal distribution can better balance the gain characteristic and the thermal characteristic.